http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017315085-A1

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filingDate 2017-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fbd1a95bf10cbc8f3225757122e756c
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publicationDate 2017-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017315085-A1
titleOfInvention Backside CMOS Compatible BioFET With No Plasma Induced Damage
abstract The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
priorityDate 2012-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.