abstract |
Methods for void-free SiO 2 filling of fine recessed features and selective SiO 2 deposition on catalytic surfaces are described. According to one embodiment, the method includes providing a substrate containing recessed features, coating surfaces of the recessed features with a metal-containing catalyst layer, in the absence of any oxidizing and hydrolyzing agent, exposing the substrate at a substrate temperature of approximately 150° C. or less, to a process gas containing a silanol gas to deposit a conformal SiO 2 film in the recessed features, and repeating the coating and exposing at least once to increase the thickness of the conformal SiO 2 film until the recessed features are filled with SiO 2 material that is void-free and seamless in the recessed features. In one example, the recessed features filled with SiO 2 material form shallow trench isolation (STI) structures in a semiconductor device. |