| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eae3034a505868e4f55845e3e3667646 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f17179c3c67c9df209fb504f48150de1 |
| publicationDate |
2017-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017287966-A1 |
| titleOfInvention |
Image Sensor Contact Enhancement |
| abstract |
A method of image sensor fabrication includes providing a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in the semiconductor material. The method also includes providing peripheral circuitry disposed in the semiconductor material, including a first electrical contact to the semiconductor material, and forming a transfer gate disposed to transfer image charge from the photodiode to the floating diffusion. An isolation layer is deposited on a surface of the semiconductor material, and contact holes are etched in the isolation layer. A first silicide layer disposed on the floating diffusion, a second silicide layer disposed on the transfer gate, and a third silicide layer disposed on the first electrical contact to the semiconductor material are formed in the contact holes by depositing a silicon layer in the contact holes and metalizing the silicon layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10861892-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020161358-A1 |
| priorityDate |
2016-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |