http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017287719-A1

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filingDate 2017-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3dee16049d4aa75868155a2c728c1d9
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publicationDate 2017-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017287719-A1
titleOfInvention Methods of forming memory cells with air gaps and other low dielectric constant materials
abstract Various embodiments include apparatuses and methods of forming the same. One such apparatus can include a first dielectric material and a second dielectric material, and a conductive material between the first dielectric material and the second dielectric material. A charge storage element, such as a floating gate or charge trap, is between the first dielectric material and the second dielectric material and adjacent to the conductive material. The charge storage element has a first surface and a second surface. The first and second surfaces are substantially separated from. the first dielectric material and the second dielectric material, respectively, by a first air gap and a second air gap. Additional apparatuses and methods are disclosed.
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