Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66818 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2016-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b68f212b4c97c10ec1976538105c3fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_895396550af7561ea4792e2a75c45663 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68b3707fc15c5ee12d4006022e0aaf5d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd578895f42007b8d20421a026176c0a |
publicationDate |
2017-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2017278972-A1 |
titleOfInvention |
Semiconductor devices, finfet devices with optimized strained-sourece-drain recess profiles and methods of forming the same |
abstract |
Semiconductor devices, FinFET devices with optimized strained-source-drain recess profiles and methods of forming the same are provided. One of the semiconductor devices includes a substrate, a gate stack over the substrate and a strained layer in a recess of the substrate and aside the gate stack. Besides, a ratio of a depth at the greatest width of the recess to a width of the gate stack ranges from about 0.5 to 0.7. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200049468-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11489062-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10872818-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10707135-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019131183-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023050300-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102209956-B1 |
priorityDate |
2016-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |