http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017278972-A1

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publicationDate 2017-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017278972-A1
titleOfInvention Semiconductor devices, finfet devices with optimized strained-sourece-drain recess profiles and methods of forming the same
abstract Semiconductor devices, FinFET devices with optimized strained-source-drain recess profiles and methods of forming the same are provided. One of the semiconductor devices includes a substrate, a gate stack over the substrate and a strained layer in a recess of the substrate and aside the gate stack. Besides, a ratio of a depth at the greatest width of the recess to a width of the gate stack ranges from about 0.5 to 0.7.
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