| abstract |
Transistor devices having a doped buffer or sub-structure between an active channel and a substrate. In one embodiment, a p-type dopant, such as magnesium, zinc, carbon, beryllium, and the like, may be introduced in the formation of the sub-structure, wherein the dopant may act as a p/n junction at the active channel to source and drain interfaces and decrease the off-state leakage path. In another embodiment, the material used for the formation of the doped sub-structure may be substantially the same as the material, without the dopant, used for the formation of the active channel, such that no heterojunction will be formed which could result in crystalline imperfections. |