| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af1aac0717028a45913e80d9e05fad8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49894
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2017-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb2879af19650ccc514535f1d675b57d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_978b9d2b0b37d40e8190f6d09f11060e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b79d3a699cc99ea5f88147cf4c82df84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ab3cd8d33447df682b0df9690f1d481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68538298447e3353debd45f1149dc99c |
| publicationDate |
2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017271251-A1 |
| titleOfInvention |
Fabrication method of semiconductor substrate |
| abstract |
A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer. |
| priorityDate |
2012-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |