Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0435 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-30422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0453 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-30438 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31769 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3177 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-045 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-04 |
filingDate |
2014-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db8d6db9993cc08c4b5cef29be104ffc |
publicationDate |
2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2017271117-A1 |
titleOfInvention |
Corner rounding correction for electron beam (ebeam) direct write system |
abstract |
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction, each of the openings of the first column of openings having dog-eared corners. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings, each of the openings of the second column of openings having dog-eared corners. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10747115-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10191376-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11451419-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017269481-A1 |
priorityDate |
2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |