| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cce1bf18a448daccdd9f4edb9dcb3fb2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-72 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-004 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2015-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_669c92851f4724b65645dcd9fa1d3779 |
| publicationDate |
2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017271003-A1 |
| titleOfInvention |
Determining resistance states of memristors in a crossbar array |
| abstract |
In one example in accordance with the present disclosure a method of determining a resistance state of a memristor in a crossbar array is disclosed. In the method, a combined reference-sneak current is determined based on a reference voltage, a sense voltage, a non-access voltage, and a voltage applied to a target row line. Also in the method a combined read-sneak current is determined based on a read voltage, a sense voltage, a non-access voltage, and a voltage applied to a reference row line. A resistance state of a target memristor is determined based on the combined reference-sneak current and the combined read-sneak current. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157668-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111144058-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018108410-A1 |
| priorityDate |
2015-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |