| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d8b3fb0ddaba6f0c6c08954b7a19bb12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_828d5429fdc8aabf8850bd1103799e26 |
| publicationDate |
2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017243891-A1 |
| titleOfInvention |
Method for manufacturing thin film transistor, and thin film transistor |
| abstract |
Disclosed is a method for manufacturing a thin film transistor. The method for manufacturing a thin film transistor includes: forming a patterned semiconductor layer and a patterned wiring layer on a substrate; and etching the wiring layer to form a channel part. Herein, the wiring layer includes a compensation layer and the compensation layer is formed from a material including a metal of a metal oxide component among components of a material forming the semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11233138-B2 |
| priorityDate |
2014-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |