Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03D7-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03C3-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7391 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03C3-245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03C3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66977 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66356 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03C3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
filingDate |
2017-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3931d2f7669e9b985e55a44006ac5b28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40700f1b64c7f37899a2dfb3da0d804b |
publicationDate |
2017-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2017230004-A1 |
titleOfInvention |
Modified tunneling field effect transistors and fabrication methods |
abstract |
Tunneling field effect transistors and fabrication methods thereof are provided, which include: an integrated circuit device which includes a circuit input configured to receive an input voltage and a circuit output configured to deliver an output current. The integrated circuit also includes a circuit element having at least one tunneling field effect transistor (TFET). The circuit element connects the circuit input to the circuit output and is characterized by a V-shaped current-voltage diagram. The V-shaped current-voltage diagram describes the relationship between the input voltage of the circuit input and the output current of the circuit output. |
priorityDate |
2014-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |