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filingDate 2017-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017230004-A1
titleOfInvention Modified tunneling field effect transistors and fabrication methods
abstract Tunneling field effect transistors and fabrication methods thereof are provided, which include: an integrated circuit device which includes a circuit input configured to receive an input voltage and a circuit output configured to deliver an output current. The integrated circuit also includes a circuit element having at least one tunneling field effect transistor (TFET). The circuit element connects the circuit input to the circuit output and is characterized by a V-shaped current-voltage diagram. The V-shaped current-voltage diagram describes the relationship between the input voltage of the circuit input and the output current of the circuit output.
priorityDate 2014-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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