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filingDate 2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017229415-A1
titleOfInvention Method of manufacturing semiconductor device having base and semiconductor element and semiconductor device
abstract In a method of manufacturing a semiconductor device of one embodiment, support members and a film which is formed of a paste containing metal particles and surrounds the support members are provided above a surface of a base. Then a semiconductor element is provided above the support members and the film. Subsequently, the film is sintered to join the base and the semiconductor element. The support members are formed of a metal which melts at a temperature equal to or below a sintering temperature of the metal particles contained in the paste. The support members support the semiconductor element after the semiconductor element is provided above the support members and the film.
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