| abstract |
A three-dimensionally integrated imaging device is provided. The imaging device includes a first layer that includes a first transistor including a metal oxide in a channel formation region, a first insulating layer, and a second insulating layer, and a second layer that includes a photodiode. A conductive layer in contact with the metal oxide is electrically connected to one of a cathode and an anode of the photodiode via a conductor that penetrates the first insulating layer and the second insulating layer. |