| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af17c491906d7d677939f7f2c2f7d157 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-263 |
| filingDate |
2017-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a84a2c9a60a063dddb43a379f69ab6f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28abfbbfa8bda5c835107bbdd236d78a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff7d5f5995d7dbfb198fd9c3661a14ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b283d934a650bcaec12bd25532fe40f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8018d6a9a07dc801123e0166ad5d1f44 |
| publicationDate |
2017-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017221712-A1 |
| titleOfInvention |
Laser annealing apparatus and laser annealing method |
| abstract |
The present invention provides an efficient heat treatment such as activation treatment of impurities on a substrate such as a thick silicon wafer with large heat capacity by laser annealing. n Provided is a laser annealing apparatus 1 for heat-treating a surface of a substrate 30 comprising: a pulse oscillation laser source 10 which generates a pulse laser with gentle rise time and long pulse width; a continuous wave laser source 20 which generates a near-infrared laser for assisting annealing; optical systems 12, 22 which shape and guide beams 15, 25 of the two types of lasers respectively so as to irradiate the surface of the substrate 30 therewith; and a moving device 3 which moves the substrate 30 relatively to the laser beams 15, 25 to allow scanning of the combined irradiation of the two types of laser beams. According to this apparatus, deep activation of impurities can be performed in a thick semiconductor substrate with large heat capacity while securing sufficient light penetration depth and thermal diffusion length therefor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102019211417-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102019211487-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021187659-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10074648-B2 |
| priorityDate |
2009-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |