| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cce1bf18a448daccdd9f4edb9dcb3fb2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0057 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2014-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_758ada19c1f14c9309ffbf4e03504d22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3295a288e55ca355c6db34b32a13c8bd |
| publicationDate |
2017-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017213590-A1 |
| titleOfInvention |
Determining a resistance state of a cell in a crossbar memory array |
| abstract |
According to an example, in a method for determining a resistance state of a cell in a crossbar memory array, a first read voltage may be applied across a cell to sense a first cell current. In addition, a second read voltage may be applied across the cell to sense a second cell current. A difference value between the first cell current and the second cell current may be identified and a resistance state of the cell may be determined based on the difference value. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9847126-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017200496-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9916894-B2 |
| priorityDate |
2014-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |