| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_de094784025e53546f898a3de5a5e393 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2013 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-1473
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0558
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-14528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61B5-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61B5-1473
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate |
2015-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_681c9ffcb1008e835c1fc9f1e7caa382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68312835635962c7ac4de4870384ed8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a27872f78c236bff03d7e019815c6dd2 |
| publicationDate |
2017-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017200909-A1 |
| titleOfInvention |
3d graphene transistor |
| abstract |
A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject matter of the invention concerns a three dimensional field-effect transistor having a channel based on graphene foam and the use of ionic liquid as a gate. The graphene foam is made of a three-dimensional network of single and double layer graphene that extends in all the three dimensions. Metal contacts on either end of the graphene foam form the drain and source contacts of the transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3703134-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11390527-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11732296-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11536722-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021500754-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10968481-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021174068-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11370662-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11254775-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11782057-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11309388-B2 |
| priorityDate |
2014-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |