Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2017-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92321cb1e03f4504e5dad0e733a1413c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87ebb71ef85387bd2cd0200823c40946 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27c5262addd4bc584b769628b7cfa4ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_338c3aa685654dd0c9a720a8b20b3fbf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be08b26f8d4214f1b952ccdf04b9f1 |
publicationDate |
2017-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2017194503-A1 |
titleOfInvention |
Semiconductor Device |
abstract |
A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947728-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017062531-A1 |
priorityDate |
2013-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |