Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
filingDate |
2016-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afe2716f5f3ed8d1530c91a6d6d24f31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45e08e1dc890fd258cbaa6667ccd4f52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c71cfd1ae0bf8928f8c7a557a038384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1de17f6985e6fc1a1989ece0e4146bf1 |
publicationDate |
2017-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2017194321-A1 |
titleOfInvention |
Semiconductor device with epitaxial source/drain |
abstract |
A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a fin extending along a first direction over a substrate and a gate structure extending in a second direction overlying the fin. The gate structure includes a gate dielectric layer overlying the fin, a gate electrode overlying the gate dielectric layer, and a first insulating gate sidewall on a first lateral surface of the gate electrode extending along the second direction. A source/drain region is formed in the fin in a region adjacent the gate structure. A portion of the source/drain region extends under the insulating gate sidewall for a substantially constant distance along the first direction. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102018100114-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190055677-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102113245-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200066561-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I783011-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102326971-B1 |
priorityDate |
2016-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |