| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 |
| filingDate |
2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b901c15d280422f25e81b3b5b10220ee |
| publicationDate |
2017-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017191183-A1 |
| titleOfInvention |
Method of manufacturing silicon carbide ingot, silicon carbide seed substrate, silicon carbide substrate, semiconductor device and method of manufacturing semiconductor device |
| abstract |
A method of manufacturing a silicon carbide ingot includes the steps of: preparing a silicon carbide seed substrate having a first main surface and a second main surface located opposite the first main surface; forming a metal carbide film on the second main surface at a temperature of not more than 2000° C.; and growing a silicon carbide single crystal on the first main surface by sublimation, while supporting the silicon carbide seed substrate having the metal carbide film formed thereon by a supporting member. In the growing step, a supported portion of the surface of the silicon carbide seed substrate supported by the supporting member is in a region other than a region where the metal carbide film has been formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3767016-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11225729-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112962083-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I766133-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11149357-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3733935-A4 |
| priorityDate |
2014-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |