| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_91d1894f8f1c2213bc47f917f9996392 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0722
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-62 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-072 |
| filingDate |
2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_480ee6312e94da5ece263e065d7da737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e6b37025cd1118d8bd7daf32e4b03e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98304fe4bd07940f530c029fc1ac98e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2806d795745e6bf2e56fc3d337b2fbb |
| publicationDate |
2017-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017183553-A1 |
| titleOfInvention |
Aln crystal preparation method, aln crystals, and organic compound including aln crystals |
| abstract |
An AlN crystal preparation method includes using at least one element excluding Si that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN. In the preparation method, a composition including at least Al and the element is melted. Al vapor and nitrogen gas are reacted at a prescribed reaction temperature. AlN crystals are formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11345640-B2 |
| priorityDate |
2014-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |