| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R15-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K2217-0027 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7815
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R19-0092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R19-25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-68 |
| filingDate |
2016-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_929fb9172620705f34ad04b96dc8c822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_507f94706f77541ae1a6cf9003a9de48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77c4cd6193bc37cac5f32530a847c8b3 |
| publicationDate |
2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017170823-A1 |
| titleOfInvention |
Current Measurement in a Power Semiconductor Device |
| abstract |
A semiconductor device includes a first load terminal, a second load terminal and a semiconductor body coupled to the first load terminal and the second load terminal. The semiconductor body is configured to conduct a load current along a load current path between the first load terminal and the second load terminal. The semiconductor device further includes a control electrode electrically insulated from the semiconductor body and configured to control a part of the load current path, and an electrically floating sensor electrode arranged adjacent to the control electrode. The sensor electrode is electrically insulated from each of the semiconductor body, and the control electrode and is capacitively coupled to the load current path. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021150565-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7335190-B2 |
| priorityDate |
2015-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |