| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_879d07a23bec5174e2ae70a3ded943d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bdf081e4c2eaf21d89b1f2b92a6f30e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e9802024cd1242ed07141bbc20d9845a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 |
| filingDate |
2016-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_028cafd9c92ee813eb3536493dcc5f84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb1ce192dd8af7e3752d78573c76c9e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f39e6fbf9ca12866f42b01b949682b5 |
| publicationDate |
2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017170234-A1 |
| titleOfInvention |
Magnetoresistive random access memory device and method of manufacturing the same |
| abstract |
A magnetoresistive random access memory (MRAM) device including a substrate including a plurality of active patterns arranged along a first direction, each of the active patterns extending in a diagonal direction with respect to the first direction; a plurality of gate structures on the substrate, the gate structures extending in a second direction substantially perpendicular to the first direction; a source line structure electrically connected to source regions of the respective active patterns, the source line structure extending in the first direction; a plurality of magnetic tunnel junction (MTJ) structures electrically connected to drain regions of the respective active patterns, the MTJ structures being spaced apart from each other; and a bit line structure electrically connected to the MTJ structures in respective memory cells, the memory cells sharing with the source line structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I802013-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113497083-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022052110-A1 |
| priorityDate |
2015-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |