| abstract |
The invention relates to electrically doped semiconducting material comprising iii) at least one electrical dopant selected from metal salts consisting of at least one metal cation and at least one anion and iv) at least one matrix compound of formula 1 n n n n n n n n n n wherein each of R 1 , R 2 , R 1 , R 2′ is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 haloalkyl and C 6 -C 14 aryl or both substituents on the same aromatic ring of the xanthene skeleton are hydrocarbyl groups linked with each other to form together an anelated divalent C 2 -C 10 hydrocarbyl group and A and A′ are independently selected from C 1 -C 20 heteroaryl group comprising at least one sp 2 hybridized nitrogen atom as well as an electronic device and a compound. |