http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017162724-A1

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filingDate 2016-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017162724-A1
titleOfInvention Fast process flow, on-wafer interconnection and singulation for mepv
abstract A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality of metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.
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