| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a4ba732e996ccb96709867320c92feb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05124 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5286 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 |
| filingDate |
2017-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3372aa4a79ac1b04e4f139ba3135d92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1c9779fdad2e5081f9fe62b6da18763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e179a82217f2280dbec027fcfcb61da |
| publicationDate |
2017-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017162505-A1 |
| titleOfInvention |
Semiconductor device |
| abstract |
The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed in a second metal layer and directly under the metal pad, wherein an oxide layer is positioned between the first metal layer and the second metal layer. |
| priorityDate |
2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |