| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59c820ad08f8533c7440ae1d9235b168 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-40245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-37147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-564
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-495 |
| filingDate |
2016-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81fa71ec90aa52a9c3393b76ee811a25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_334a78270c3d3db0e5455308eda475dc |
| publicationDate |
2017-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017162461-A1 |
| titleOfInvention |
Semiconductor Device and Method of Manufacturing Thereof |
| abstract |
A semiconductor device is provided. The semiconductor device includes a first semiconductor component having a semiconductor substrate, and a barrier layer disposed at least on or at a portion of the first semiconductor component. The barrier layer includes a polymer material and an organic metal complexing agent covalently bound to the polymer material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11049805-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10516381-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11082028-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3422399-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019207582-A1 |
| priorityDate |
2015-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |