| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0727 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-866 |
| filingDate |
2016-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce10cfd73921f7e3960b93cd2ccba041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f42bc5b8d6582f298e2f92dd391b0741
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40fa8185edbcda7779f07e4a325e012e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_971c3139a54f6eb6bf24370411876288 |
| publicationDate |
2017-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017148904-A1 |
| titleOfInvention |
Power Semiconductor Transistor Having Increased Bipolar Amplification |
| abstract |
A transistor includes first and second load terminals and a semiconductor body coupled to both terminals. The semiconductor body includes: a drift region having dopants of a first conductivity type; a transistor section for conducting a forward load current and having a control head coupling the first load terminal to a first side of the drift region; and a diode section for conducting a reverse load current. A diode port couples the second load terminal to a second side of the drift region and includes: a first emitter electrically connected to the second load terminal and having dopants of the first conductivity type for injecting majority charge carriers into the drift region; and a second emitter having dopants of a second conductivity type for injecting minority charge carriers into the drift region. A pn-junction transition between the first and second emitters has a breakdown voltage of less than 10 V. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113224164-A |
| priorityDate |
2015-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |