http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017141259-A1

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filingDate 2017-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2abe5da7191680bad3ee7b7f5cd6cc6e
publicationDate 2017-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017141259-A1
titleOfInvention Nitride semiconductor wafer and manufacturing method thereof
abstract Provided is a nitride semiconductor wafer in which, above a nitride semiconductor template having a nitride semiconductor layer as a top layer thereof, a light emitting layer having a multiple quantum well structure that is formed by a regrown nitride semiconductor and a p-type nitride semiconductor layer are stacked. Here, when the light emitting layer having a multiple quantum well structure includes a plurality of well layers and one of the well layers that is the closest to the p-type nitride semiconductor layer is referred to as a top well layer, a distance t from a regrowth interface of the nitride semiconductor layer of the nitride semiconductor template to the top well layer is 1 μm or less, and the top well layer has an oxygen concentration of 5.0×10 16 cm −3 or less.
priorityDate 2014-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.