http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017141232-A1

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filingDate 2016-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb86bbca2b55cdd21aa6a27b389c5296
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publicationDate 2017-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017141232-A1
titleOfInvention Semiconductor structure with oxide semiconductor layer
abstract The present invention provides a semiconductor structure, including a base, a patterned oxide semiconductor (OS) layer, two source/drain regions, a protective layer, a gate layer and a gate dielectric layer. The patterned OS layer is disposed on the base. Two source/drain regions are disposed on the patterned OS layer and are separated by a recess. Each source/drain region includes an inner sidewall facing the recess and an outer sidewall opposite to the inner sidewall. The protective layer is disposed on a sidewall of the patterned OS layer but is not on the inner sidewall of the source/drain region. The gate layer is disposed on the patterned OS layer, and the gate dielectric layer is disposed between the gate layer and the patterned OS layer.
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priorityDate 2015-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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