| abstract |
One or more embodiments of the present invention report here a comparative study of field effect transistors (FETs) fabricated with semiconducting polymer PBT, regioregular semiconducting polymers, PCDTPT and their fluorinated analogue (P2F, PCDTFBT), in the transistor channel. The present invention shows that simple fluorination of PBT and PCDTPT to PCDTFBT leads to air-stability and reliable transistor characteristics. The FETs fabricated from aligned PCDTFBT yielded stable threshold voltages (at zero volt) and a narrow distribution of saturation hole mobilities of 65 cm 2 V −1 s −1 (average over 50 independent FET devices). At higher source-drain voltage (higher electric field in the channel) the mobility approaches 100 cm 2 V −1 s −1 , the highest value for semiconducting polymers reported to date. High mobility is retained over 150 hours in ambient air without any encapsulation layers. The results obtained in one or more embodiments of the invention represent important progress for solution-processed plastic transistors, and provide molecular design guidelines for high-mobility and air-stable conjugated polymers. |