| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0297
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0291 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C19-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate |
2017-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fa2f1cf002f782d6fbf62e9b457795a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4d9be286624dc55ccecf0a4f6e26e04 |
| publicationDate |
2017-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017131607-A1 |
| titleOfInvention |
Semiconductor device, driver circuit, and display device |
| abstract |
To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10504420-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11308910-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629149-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964252-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017148402-A1 |
| priorityDate |
2013-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |