| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-10083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-10166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-10015 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78651 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-008 |
| filingDate |
2016-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86278739d78f82e4e8019458d88aea98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6539728aad4a708a8bf00790526094dc |
| publicationDate |
2017-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017125405-A1 |
| titleOfInvention |
Method for forming capacitor, semiconductor device, module, and electronic device |
| abstract |
A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018337086-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916621-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10580694-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019379002-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I818110-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10847739-B2 |
| priorityDate |
2015-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |