| abstract |
A method, and the resulting structure, of a semiconductor device where a first and second gate structure is formed above a Semiconductor-on-Insulator (SOI) material. Following any detrimental processes used to form the first gate structure, the base semiconductor material is exposed and the semiconductor material beneath the second gate structure is removed. A new semiconductor material is grown from the exposed base semiconductor material, and through the second gate structure, creating a device having FET and FinFET devices containing 2 different semiconductor materials. |