| abstract |
Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L 2 -M-C 5 R 4 -[(ER 2 ) 2 —NR]—, wherein M is Ti, Zr, or Hf bonded in an η 5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C 1 -C 4 hydrocarbon group; and each L is independently a −1 anionic ligand selected from the group consisting of NR′ 2 , OR′, Cp, amidinate, β-diketonate, or keto-iminate, wherein R′ is a H or a C 1 -C 4 hydrocarbon group and adjacent R's may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is C 1 to C 4 . Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes. |