| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d0a3d10ed9477633fd2c07c6da61dc49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb351a5a4e03ee3773bd0df5dbae9ac3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2016-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c2a6391f5380e610b77b38baf271ab4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_976dcb06adb15775734f44308472a4c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_408bbbf62402d57638dd5932c576fcc1 |
| publicationDate |
2017-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017104081-A1 |
| titleOfInvention |
Method for preparing titanium-aluminum alloy thin film |
| abstract |
A method for preparing a TiAl alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a titanium precursor are introduced into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (I); and the aluminum precursor and the titanium precursor are brought into contact with the substrate so that a titanium-aluminum alloy thin film is formed on the surface of the substrate by vapor deposition. The method solves the problem of poor step coverage ability and the problem of incomplete filling with regard to the small-size devices by the conventional methods. Meanwhile, the formation of titanium-aluminum alloy thin films with the aid of plasma is avoided so that the substrate is not damaged by plasma. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018138045-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170316-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9818616-B1 |
| priorityDate |
2015-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |