| abstract |
The present invention provides a vacuum tube nonvolatile memory and the method of manufacturing it. The vacuum tube nonvolatile memory comprises oxide-nitride-oxide composite structure as gate dielectric layer, wherein the nitride layer can trap charges and provide better insulating block capability between the gate and vacuum channel. The present structure exhibits superior program and erase speed as well as the retention time. It also provides with excellent gate controllability and negligible gate leakage current due to adoption of the gate insulator. |