http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017084338-A1

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filingDate 2016-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1036912048135ab6758a27ee1f293ad1
publicationDate 2017-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017084338-A1
titleOfInvention Three dimensional stacked nonvolatile semiconductor memory
abstract A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks. The first block has a first cell unit which includes a memory cell to be programmed and a second cell unit which does not include a memory cell to be programmed, and programming is executed by applying a program potential or a transfer potential to word lines in the first block after the initial potential of channels of the memory cells in the first and second cell units is set to a plus potential. In the programming, the program potential and the transfer potential are not applied to word lines in the second block.
priorityDate 2008-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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