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filingDate 2016-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017077278-A1
titleOfInvention Device with Channel Having Varying Carrier Concentration
abstract A semiconductor device including a device channel with a gate-drain region having a carrier concentration that varies laterally along a direction from the gate contact to the drain contact is provided. Lateral variation of the carrier concentration can be implemented by laterally varying one or more attributes of one or more layers located in the gate-drain region of the device.
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