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filingDate 2016-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b0eb3c7eceae6836d47c40a116768a6
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publicationDate 2017-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017067890-A1
titleOfInvention On-Chip Disease Diagnostic Platform for Dual-Gate Ion Sensitive Field Effect Transistor
abstract Dual-gate ion-sensitive field effect transistor (ISFET) and methods implementing the dual-gate ISFETs for disease diagnostics are disclosed herein. An exemplary method includes providing a biological sample to a dual-gate ISFET. The dual-gate ISFET includes a fluidic gate structure and a gate structure, where the fluidic gate structure and the gate structure are disposed over opposite surfaces of a device substrate. The method further includes generating enzymatic reactions from enzyme-modified detection mechanisms. The enzyme-modified detection mechanisms release ions into an electrolyte solution of the fluidic gate structure. The method further includes biasing the fluidic gate structure and the gate structure to generate an electrical signal as a sensing layer of the fluidic gate structure reacts with the ions. The electrical signal indicates an ion concentration in the electrolyte solution that correlates with a presence or a quantity of target analytes in the biological sample.
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priorityDate 2011-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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