| abstract |
A gas barrier laminate ( 10 ) having a very thin metal oxide film (ALD film) ( 5 ) formed on an inorganic oxide layer ( 3 ) by an atomic layer deposition method, the inorganic oxide layer ( 3 ) including a metal oxide or a metal oxynitride that contains at least either Si or Al, and a ratio (d1/d2) of a thickness (d1) of the inorganic oxide layer ( 3 ) and a thickness (d2) of the ALD film ( 5 ) being 3 to 50. The gas barrier laminate features not only a high degree of gas-barrier property but also excellent productivity. |