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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fe8e766b16369e6615572dd2537c54e
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publicationDate 2017-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017063028-A1
titleOfInvention Wafer scale monolithic integration of lasers, modulators, and other optical components using ald optical coatings
abstract After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.
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