| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-0525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-0032 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-042 |
| filingDate |
2015-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cec07406f30a7a75fb782c9dbc1c172c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de331036700da249c2c87e20ec00d205 |
| publicationDate |
2017-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017047169-A1 |
| titleOfInvention |
Method for manufacturing tungsten-based capacitor element |
| abstract |
The present invention provides a method for producing a capacitor element having good LC characteristics, wherein, after a chemical conversion process to form a dielectric layer on the surface layer of an anode body obtained by forming a powder mainly comprising tungsten, followed by sintering, a semiconductor layer and a conductor layer are sequentially formed on the dielectric layer; an etching process is conducted before forming the dielectric layer to remove a natural oxide film formed on the surface layer on the outer surface and on the surface inside the pores of the anode body so as to adjust the film thickness to a range of 0.5 to 5.0 nm; and the chemical conversion process is conducted at a temperature from −4 to 18° C. for 7 to 110 minutes after reaching a predetermined voltage. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11390534-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7238783-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019103040-A1 |
| priorityDate |
2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |