| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2016-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc8d4be376019ba724c765e4a93e3aeb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4514f136975e489e171d7c379dab25ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c77499bb17a75c6266165e6de69f06b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c6b47c7b915f97aae7b82e5357cce1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1052fca68252f333cfa33275e6d7c83a |
| publicationDate |
2017-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017040232-A1 |
| titleOfInvention |
Method of manufacturing semiconductor device |
| abstract |
A technique is provided in which a deviation of a characteristic of a semiconductor device is suppressed from occurring. The technique includes a method of a manufacturing a semiconductor device, including: (a) polishing a first silicon-containing layer formed on a substrate including a convex structure; (b) obtaining a data representing a height distribution of a surface of the first silicon-containing layer after performing the step (a); (c) determining a process condition; and (d) supplying a process gas to form a second silicon-containing layer wherein the process gas is activated such that a concentration of an active species of the process gas at a center portion of the substrate differs from a concentration of an active species at a peripheral portion of the substrate to adjust heights of surfaces of a laminated film according to the process condition. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019295854-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910217-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978310-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021305045-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600636-B2 |
| priorityDate |
2015-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |