| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2016-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e488ba570f8d9812e017da1ffb7a9130
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3658d963980ac56df4d6be5a7643d15d |
| publicationDate |
2017-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017033130-A1 |
| titleOfInvention |
Semiconductor device |
| abstract |
A semiconductor device includes a first transistor which includes a first gate electrode below its oxide semiconductor layer and a second gate electrode above its oxide semiconductor layer, and a second transistor which includes a first gate electrode above its oxide semiconductor layer and a second gate electrode below its oxide semiconductor layer and is provided so as to at least partly overlap with the first transistor. In the semiconductor device, a conductive film serving as the second gate electrode of the first transistor and the second gate electrode of the second transistor is shared between the first transistor and the second transistor. Note that the second gate electrode not only controls the threshold voltages (Vth) of the first transistor and the second transistor but also has an effect of reducing interference of an electric field applied from respective first gate electrodes of the first transistor and the second transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021035991-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10283532-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9911757-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043858-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905579-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10942408-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475869-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11362118-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110581142-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11537019-B2 |
| priorityDate |
2011-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |