| abstract |
A semiconductor device that is suitable for miniaturization is provided. The semiconductor device has a plurality of different transistors, active layers of the plurality of transistors are each an oxide semiconductor, and in the plurality of transistors, field-effect mobility of a transistor whose channel length is maximum and field-effect mobility of a transistor whose channel length is minimum are substantially constant. Alternatively, when channel lengths ranges from 0.01 μm to 100 μm, a reduction in field-effect mobility of a transistor whose channel length is minimum with respect to field-effect mobility of a transistor whose channel length is maximum is less than or equal to 70%. |