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publicationDate 2017-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017018419-A1
titleOfInvention Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
abstract A method of manufacturing: a semiconductor device includes fanning an oxide film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor containing a metal element and a halogen group to the substrate; and supplying an oxidant to the substrate. In the act of supplying the oxidant, a catalyst is supplied to the substrate together with the oxidant. In the act of supplying the precursor, the catalyst is not supplied to the substrate.
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