| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2013 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-20 |
| filingDate |
2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50a4730c6f2d50ebed3004476d0ffb0f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaf8739795bdf2e93563d762937aa2c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eb739b6776a55830e77417c817cc0c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d072f1629ca27adc6324af88e2d27d91 |
| publicationDate |
2017-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017018369-A1 |
| titleOfInvention |
CRYSTAL GROWTH CONTROL AGENT, METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM, COMPOSITION FOR FORMING HOLE TRANSPORT LAYER, AND SOLAR CELL |
| abstract |
First, there is provided a crystal growth control agent which is capable of suppressing an increase in a crystal size of a p-type semiconductor, and performing chemical modification on a surface of p-type semiconductor microparticle. Second, there is provided a composition for forming a hole transport layer which is capable of prompting crystallization and fine pulverization of the p-type semiconductor and performing the chemical modification on the surface of the p-type semiconductor microparticle even in the case where an organic salt (an ionic liquid) containing an anion other than the thiocyanate ion is used. According to the present invention, the crystal growth control agent contains at least one of sulfur-containing compounds (except for thiocyanate) selected from the group consisting of a compound, which generates a thiolate anion due to dissociation of a proton or a cation, and a disulfide compound, and controls crystal growth of a p-type semiconductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111525034-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10367038-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189433-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016276607-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9799841-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347696-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111740015-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023056337-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018301513-A1 |
| priorityDate |
2014-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |