| abstract |
One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof. |