| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2016-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24b3c8285a80d31f331eaeb5c03c1a2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8257c2c112df137e9bb335c6107ad704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f837660ded08fb164a653f62d54e739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2a4775ad99b20dc2113298554e58f4a |
| publicationDate |
2016-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016365279-A1 |
| titleOfInvention |
Method of fabricating semiconductor device having contact structures |
| abstract |
Provided is a method of fabricating a semiconductor device, the method including forming interconnection structures extending parallel to each other on a substrate; performing a coating process and forming a liquid state silicon source material layer filling an area between the interconnection structures; performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer; and crystallizing the amorphous silicon layer and forming contact plugs. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10559571-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108766969-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11233057-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10529719-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018301459-A1 |
| priorityDate |
2015-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |