Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
classificationCPCInventive |
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classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e73ecb1d0ef7da94253c60ca6a5a5621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e125791469917725a57f37d2f5c6b97f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38af66c0d2d4bbb62f28fd6a4f027254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7819d634f5333494ec9ef45da50a6c44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e22500b48cdf8436900c92c6baf1daa |
publicationDate |
2016-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2016359043-A1 |
titleOfInvention |
Semiconductor device including fin structures and manufacturing method thereof |
abstract |
A method of manufacturing a semiconductor Fin FET includes forming a fin structure over a substrate. The fin structure includes an upper layer, part of which is exposed from an isolation insulating layer. A dummy gate structure is formed over part of the fin structure. The dummy gate structure includes a dummy gate electrode layer and a dummy gate dielectric layer. A source and a drain are formed. The dummy gate electrode is removed so that the upper layer covered by the dummy gate dielectric layer is exposed. The upper layer of the fin structure is removed to make a recess formed by the dummy gate dielectric layer. Part of the upper layer remains at a bottom of the recess. A channel layer is formed in the recess. The dummy gate dielectric layer is removed. A gate structure is formed over the channel layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837408-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361280-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10644131-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741672-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109427564-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019355646-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109427564-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11557676-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10304840-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019326429-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10332986-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031315-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971626-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019066778-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018069114-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11699756-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110660853-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022037505-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11749738-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269966-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388756-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629604-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158730-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905480-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11245023-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11222977-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109427900-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018236357-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022157965-A1 |
priorityDate |
2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |